+86 0755 8361 6524
取消

W631GG6KB15J

  • W631GG6KB15J
  • W631GG6KB15J
W631GG6KB15J
Memory
Winbond Electronics
IC DRAM 1GBIT P
-
托盘
0
-
-
TYPEDESCRIPTION
MfrWinbond Electronics
Series-
PackageTray
Part StatusObsolete
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR3
Memory Size1Gb (64M x 16)
Memory InterfaceParallel
Clock Frequency667 MHz
Write Cycle Time - Word, Page-
Access Time20 ns
Voltage - Supply1.425V ~ 1.575V
Operating Temperature-40°C ~ 105°C (TC)
Mounting TypeSurface Mount
Package / Case96-TFBGA
Supplier Device Package96-WBGA (9x13)

Micron Technology Inc.
IC FLASH 64GBIT MMC 100LBGA
Winbond Electronics
IC FLASH 32MBIT SPI/QUAD 24TFBGA
Winbond Electronics
IC FLASH 64MBIT SPI/QUAD 8SOIC
ISSI, Integrated Silicon Solution Inc
IC SRAM 18MBIT PARALLEL 165TFBGA
ISSI, Integrated Silicon Solution Inc
IC SRAM 18MBIT PARALLEL 165PBGA
ISSI, Integrated Silicon Solution Inc
IC DRAM 1GBIT PARALLEL 84TWBGA
Fremont Micro Devices Ltd
IC EEPROM 64KBIT I2C 800KHZ 8SOP
Micron Technology Inc.
IC FLSH 2GBIT XCCELA BUS 24TPBGA
Micron Technology Inc.
SLC 4G 512MX8 TSOP AIT M70A
Winbond Electronics
IC DRAM 1GBIT PARALLEL 96WBGA
Knowles
Micron Technology Inc.
SPECIAL/CUSTOM LPDDR4
Micron Technology Inc.
IC SDRAM 4GBIT 800MHZ 96FBGA
ISSI, Integrated Silicon Solution Inc
IC SRAM 18MBIT PARALLEL 209LFBGA
Cypress Semiconductor Corp
IC FLASH MEM NOR 48FBGA
Cypress Semiconductor Corp
IC FLASH MEM NOR 84MCP
Cypress Semiconductor Corp
IC FLASH MEM NOR 84MCP
Cypress Semiconductor Corp
Sharp Microelectronics
IC FLASH 32M PARALLEL 56SSOP
Omron Automation and Safety
CM-S4 CONTRL(24VAC/DC) 1N/O+1N/C
关闭
Inquiry
captcha

+86 157 1065 6617

Sales3@mrd-ic.com
0